Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2167796
Reference16 articles.
1. Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN
2. Thermally stable PtSi Schottky contact on n-GaN
3. High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
4. Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN
5. GaN metal–semiconductor–metal ultraviolet photodetector with IrO2 Schottky contact
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