Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions-Reference-Cited by-同舟云学术

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Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

Published:2014-05-12 Issue:19 Volume:104 Page:192104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kamimura Takafumi,Sasaki Kohei,Hoi Wong Man,Krishnamurthy Daivasigamani,Kuramata Akito,Masui Takekazu,Yamakoshi Shigenobu,Higashiwaki Masataka

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4876920

Reference23 articles.

1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

2. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

3. First-principles study of the structural, electronic, and optical properties ofGa2O3in its monoclinic and hexagonal phases

4. Large-size β-Ga2O3 single crystals and wafers

5. Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

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