Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations-Reference-Cited by-同舟云学术

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Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Published:2014-02-17 Issue:7 Volume:104 Page:073509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Millithaler J.-F.,Iñiguez-de-la-Torre I.,Iñiguez-de-la-Torre A.,González T.,Sangaré P.,Ducournau G.,Gaquière C.,Mateos J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4866166

Reference19 articles.

1. Practical Challenges for the Commercialisation of Terahertz Electronics

2. Opening the terahertz window with integrated diode circuits

3. Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

4. Room-temperature operation of a unipolar nanodiode at terahertz frequencies

5. THz operation of asymmetric-nanochannel devices

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature;IEEE Transactions on Electron Devices;2024

2. THz Oscillation in Doped-GaN Based Planar Gunn Diode with the T-shape Channel;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

3. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes;IEEE Transactions on Electron Devices;2023-07

4. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes;IEEE Transactions on Electron Devices;2023-06

5. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes;IEEE Transactions on Electron Devices;2022-02

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