Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature-Reference-Cited by-同舟云学术

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Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature

Published:2024 Issue: Volume: Page:1-0
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

García-Sánchez Sergio¹^ORCID,Íñiguez-de-la-Torre Ignacio¹^ORCID,Pérez Susana¹^ORCID,González Tomás¹^ORCID,Mateos Javier¹^ORCID

Affiliation:

1. Applied Physics Department, USAL-NANOLAB, Universidad de Salamanca, Salamanca, Spain

Funder

MCIN/AEI/10

Junta de Castilla y León and Fondo Europeo de Desarrollo Regional

Fundación General de la Universidad de Salamanca

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/4358746/10633244.pdf?arnumber=10633244

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