Plan-view image contrast of dislocations in GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1632540
Reference17 articles.
1. The role of threading dislocations in the physical properties of GaN and its alloys
2. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
3. Anisotropic epitaxial lateral growth in GaN selective area epitaxy
4. Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
5. Pendeoepitaxy of gallium nitride thin films
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