Annealing kinetics during rapid and classical thermal processing of a laser induced defect inn‐type silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97344
Reference5 articles.
1. Annealing of Electron-Irradiatedn-Type Silicon. I. Donor Concentration Dependence
2. Annealing of Electron-Irradiatedn-Type Silicon. I. Donor Concentration Dependence
3. On the role of defect charge state in the stability of point defects in silicon
4. Temperature-Dependent Defect Production in Bombardment of Semiconductors
5. Passivation of laser induced defects in silicon by low energy hydrogen ion implantation
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