Numerical study of turnstile operation in random-multidot-channel field-effect transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2189214
Reference17 articles.
1. Ambipolar coulomb blockade characteristics in a two-dimensional Si multidot device
2. Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
3. Current fluctuation in single-hole transport through a two-dimensional Si multidot
4. Frequency-locked turnstile device for single electrons
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