Anomalous single-electron transfer in common-gate quadruple-dot single-electron devices with asymmetric junction capacitances
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=6/a=064001/pdf
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4. Ambipolar coulomb blockade characteristics in a two-dimensional Si multidot device
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Arrangement rule of stability regions and single-electron transfer in common-gate quadruple-dot devices for the real ratio of gate capacitances;Journal of Computational Electronics;2024-01-04
2. Single-electron pumping in common-gate triple-dot devices with arbitrary asymmetric gate capacitance distributions;Journal of Computational Electronics;2020-08-02
3. Single-electron pumping in single-common-gate quadruple-dot devices with asymmetric gate capacitances;Japanese Journal of Applied Physics;2019-02-04
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