Single-electron pumping in common-gate triple-dot devices with arbitrary asymmetric gate capacitance distributions
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s10825-020-01552-z.pdf
Reference33 articles.
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2. Pothier, H., Lafarge, P., Urbina, C., Esteve, D., Devoret, M.H.: Single-electron pump based on charging effects. Europhys. Lett. 17, 249–254 (1992)
3. Ono, Y., Takahashi, Y.: Electron pump by a combined single-electron/field-effect-transistor structure. Appl. Phys. Lett. 82, 1221–1223 (2003)
4. Kouwenhoven, L.P., Johnson, A.T., van der Vaart, N.C., Harmans, C.J.P.M., Foxon, C.T.: Quantized current in a quantum-dot turnstile using oscillating tunnel barriers. Phys. Rev. Lett. 67, 1626–1629 (1991)
5. Fujiwara, A., Zimmerman, N.M., Ono, Y., Takahashi, Y.: Current quantization due to single-electron transfer in Si-wire charge-coupled devices. Appl. Phys. Lett. 84, 1323–1325 (2004)
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