The evolution of Ga and As core levels in the formation of Fe∕GaAs (001): A high resolution soft x-ray photoelectron spectroscopic study-Reference-Cited by-同舟云学术

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The evolution of Ga and As core levels in the formation of Fe∕GaAs (001): A high resolution soft x-ray photoelectron spectroscopic study

Published:2008-07-15 Issue:2 Volume:104 Page:024516
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Thompson Jamie D. W.,Neal James R.,Shen Tiehan H.,Morton Simon A.,Tobin James G.,Dan Waddill G.,Matthew Jim A. D.,Greig Denis,Hopkinson Mark

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2942395

Reference53 articles.

1. Electronic analog of the electro‐optic modulator

2. Magnetoelectronics

3. Interface chemistry of metal‐GaAs Schottky‐barrier contacts

4. Molecular beam epitaxial growth of single‐crystal Fe films on GaAs

5. Interdiffusion and reaction at the Fe/GaAs(110) interface

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1. Evidence of Delta Phase of Fe in MBE-Grown Thin Epitaxial Films on GaAs;Coatings;2022-06-03

2. High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers;Semiconductor Science and Technology;2020-11-04

3. Temperature dependence of magnetic properties of ultrathin Fe thin films on GaAs substrates;Journal of Alloys and Compounds;2018-05

4. Growth, structure and morphology of epitaxial Fe(0 0 1) films on GaAs(0 0 1)c(4 × 4);Journal of Physics: Condensed Matter;2014-12-24

5. Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition;Applied Surface Science;2013-11

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