Interdiffusion and reaction at the Fe/GaAs(110) interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.7029/fulltext
Reference45 articles.
1. Parabolic quantum wells with theGaAs−AlxGa1−xAssystem
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4. Influence of Substrate Temperature on GaAs Epitaxial Deposition Rates
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