Physically based kinetic Monte Carlo modeling of arsenic-interstitial interaction and arsenic uphill diffusion during ultrashallow junction formation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2942398
Reference32 articles.
1. Diffusion of arsenic in silicon: Validity of the percolation model
2. Complex Dynamical Phenomena in Heavily Arsenic Doped Silicon
3. Diffusion and Clustering in Heavily Arsenic-Doped Silicon: Discrepancies and Explanation
4. Structure, stability, and diffusion of arsenic-silicon interstitial pairs
5. Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon
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1. Study of millisecond laser annealing on recrystallization, activation, and mobility of laser annealed SOI doped via arsenic ion implantation;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-01
2. Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing;physica status solidi (c);2013-12-09
3. Arsenic defect complexes atSiO2/Siinterfaces: A density functional theory study;Physical Review B;2009-11-30
4. Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon;Journal of Applied Physics;2008-11-15
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