Structure, stability, and diffusion of arsenic-silicon interstitial pairs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2130398
Reference18 articles.
1. Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon
2. Influences of Point and Extended Defects on As Diffusion in Si
3. Transient enhanced diffusion of arsenic in silicon
4. Heavy doping effects in the diffusion of group IV and V impurities in silicon
5. High concentration diffusivity and clustering of arsenic and phosphorus in silicon
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