Mobility anisotropy of two‐dimensional hole systems in (311)A GaAs/AlxGa1−xAs heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358419
Reference23 articles.
1. Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures
2. The growth and physics of high mobility two-dimensional hole gases
3. Strong anisotropy of hole subbands in (311) GaAs-AlAs quantum wells
4. Strong anisotropy of hole subbands in (311) GaAs-AlAs quantum wells
5. Observation of a reentrant insulating phase near the 1/3 fractional quantum Hall liquid in a two-dimensional hole system
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