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The growth and physics of high mobility two-dimensional hole gases

Published:1991-05 Issue:1-4 Volume:111 Page:318-322
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Davies A.G.,Frost J.E.F.,Ritchie D.A.,Peacock D.C.,Newbury R.,Linfield E.H.,Pepper M.,Jones G.A.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. High‐purity GaAs grown by molecular‐beam epitaxy

2. Photoluminescence from AlGaAs-GaAs single quantum wells grown on variously oriented GaAs substrates by MBE

3. High mobility two‐dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction

4. A.G. Davies, to be published;

5. Proc. 20th Intern. Conf. on Physics of Semiconductors;Davies,1990

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2. What lurks below the last plateau: experimental studies of the 0.7 × 2e2/hconductance anomaly in one-dimensional systems;Journal of Physics: Condensed Matter;2011-10-14

3. Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (311)A GaAs substrates;Journal of Luminescence;2011-01

4. Spin orientation of holes in quantum wells;Semiconductor Science and Technology;2008-10-29

5. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs∕AlGaAs;Journal of Applied Physics;2008-05

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