III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2362999
Reference14 articles.
1. S. M. Sze, Semiconductor Devices (Wiley, New York, 2002), Chap. 8, p. 280.
2. High-Power 2.3-<tex>$mu$</tex>m GaSb-Based Linear Laser Array
3. 2 μm GaInAsSb/AlGaAsSb midinfrared laser grown digitally on GaSb by modulated-molecular beam epitaxy
4. Photoluminescence of multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition at atmospheric pressure
5. Radiative recombination in type‐II GaSb/GaAs quantum dots
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