Model for dry etching of silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349339
Reference20 articles.
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5. Reactions of XeF2chemisorbed on Si(111) 7×7
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2. Determination of etching parameters for pulsed XeF2etching of silicon using chamber pressure data;Journal of Micromechanics and Microengineering;2018-02-15
3. Black silicon method: X. A review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment;Journal of Micromechanics and Microengineering;2009-02-02
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5. Feature-scale model of Si etching in SF6 plasma and comparison with experiments;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-01
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