Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4768283
Reference35 articles.
1. Semiconductor Quantum Well Intermixing
2. Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
3. Quantum well interferometric modulator monolithically integrated with 1.55 μm tunable distributed Bragg reflector laser
4. Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing
5. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
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1. Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures;Nanomaterials;2023-07-23
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3. Controllable red and blue bandgap energy shifted LEDs and modulators on InGaAsP quantum well platform;Integrated Optics: Devices, Materials, and Technologies XX;2016-03-01
4. Controllable red and blue shifting of InGaAsP quantum well bandgap energy for photonic device integration;Materials Research Express;2015-08-19
5. Postgrowth intermixing of strain engineered InAs/GaAs quantum dots;Journal of Alloys and Compounds;2014-12
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