The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3690878
Reference16 articles.
1. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural, electronic and magnetic properties of Ti-doped polar and nonpolar GaN surfaces;Journal of Crystal Growth;2017-06
2. Formation of low resistance Ti/Al-based ohmic contacts on (11–22) semipolar n-type GaN;Journal of Alloys and Compounds;2015-12
3. Ti/Al Based Ohmic Contact to As-Grown N-Polar GaN;Chinese Physics Letters;2015-08
4. Increase in light extraction efficiency of vertical light emitting diodes by a photo-electro-chemical etching method;Acta Physica Sinica;2015
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