Electrical properties of as-grown molecular beam epitaxy high-k gate dielectrics deposited on silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2180428
Reference15 articles.
1. La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy
2. Complex admittance analysis for La2Hf2O7/SiO2 high-κ dielectric stacks
3. Space-charge-limited current involving carrier injection into impurity bands of high-k insulators
4. Surface Quantum Wells in Hydrogen Implanted ZnO
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1. Tuning of structural and dielectric properties of Gd2O3 grown on Si(001);Journal of Applied Physics;2020-08-07
2. Epitaxial growth and electrical properties of ultrathin La2Hf2O7 high-k gate dielectric films;Applied Surface Science;2013-10
3. Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates;Surface Science Reports;2013-03
4. CVD-derived Hf-based High-k Gate Dielectrics;Critical Reviews in Solid State and Materials Sciences;2013-01
5. Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition;Applied Surface Science;2010-02
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