Thickness-dependent Raman active modes of SnS thin films-Reference-Cited by-同舟云学术

Thickness-dependent Raman active modes of SnS thin films

Published:2021-09-01 Issue:9 Volume:11 Page:095106
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Yonemori Itsuki¹,Dutta Sudipta²^ORCID,Nagashio Kosuke³^ORCID,Wakabayashi Katsunori¹⁴⁵^ORCID

Affiliation:

1. Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, Gakuen 2-1, Sanda, Hyogo 669-1337, Japan

2. Department of Physics, Indian Institute of Science Education and Research (IISER) Tirupati, Tirupati 517507, Andhra Pradesh, India

3. Department of Materials Engineering, The University of Tokyo, Tokyo, Japan

4. Center for Spintronics Research Network (CSRN), Osaka University, Toyonaka 560-8531, Japan

5. National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba 305-0044, Japan

Funder

Japan Society for the Promotion of Science

Collaborative Research in Engineering, Science and Technology Centre

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0062857

Reference54 articles.

1. Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit

2. Ferroelectric switching of a two-dimensional metal

3. Origin of giant negative piezoelectricity in a layered van der Waals ferroelectric

4. Two-dimensional materials with piezoelectric and ferroelectric functionalities

5. Room temperature in-plane ferroelectricity in van der Waals In 2 Se 3

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