Giant Second‐Order Nonlinearity and Anisotropy of Large‐Sized Few‐Layer SnS with Ferroelectric Stacking

Author:

Moqbel Redhwan123,Nanae Ryo4,Kitamura Satsuki4,Lee Ming‐Hao56,Lan Yann‐Wen27,Lee Chi‐Cheng8,Nagashio Kosuke4,Lin Kung‐Hsuan2ORCID

Affiliation:

1. Department of Physics National Taiwan University No. 1, Sec. 4, Roosevelt Rd. Taipei 106319 Taiwan

2. Institute of Physics Academia Sinica No. 128, Sec. 2, Academia Rd., Nangang Dist. Taipei 115201 Taiwan

3. Nano‐Science and Technology Program Taiwan International Graduate Program Academia Sinica No. 128, Sec. 2, Academia Rd., Nangang Dist. Taipei 115201 Taiwan

4. Department of Materials Engineering The University of Tokyo 7‐3‐1 Hongo Bunkyo Tokyo 113‐8656 Japan

5. Center for Condensed Matter Sciences National Taiwan University Taipei 10617 Taiwan

6. The Key Consortium of Electron Microscopy National Taiwan University Taipei 10617 Taiwan

7. Department of Physics National Taiwan Normal University Taipei 11677 Taiwan

8. Department of Physics Tamkang University New Taipei Tamsui 251301 Taiwan

Abstract

AbstractThe giant second‐order nonlinearity of SnS with ferroelectric stacking is reported. Based on theoretical calculations, the susceptibility of second harmonic generation (SHG) from SnS with ferroelectric stacking is up to 1354 pm V−1, which is three orders of magnitude higher than the values of traditional nonlinear crystals such as BBO and KTP. The SHG from ferroelectric SnS few layers is experimentally measured and its intensity is found to be 131 times larger than that of a MoS2 monolayer under the same experimental conditions, with a photon energy of 1.55 eV. The SHG susceptibility is determined to be on the order of 100 pm V−1. Numerous SnS flakes are systematically investigated using polarization‐resolved SHG. Micrometer‐sized flakes with a single domain are found, and their SHG anisotropic patterns fit well with the theoretical calculations derived from first‐principles methods. The variation in SHG anisotropic patterns, attributed to SHG interference from multiple domains, is investigated both theoretically and experimentally. Additionally, the impact of stacking disorder on the SHG anisotropic pattern is explored. It is demonstrated that polarization‐resolved SHG microscopy is a valuable tool for identifying domains in SnS flakes and examining stacking disorder.

Funder

National Science and Technology Council

National Center for Theoretical Sciences

Japan Society for the Promotion of Science

National Institute of Information and Communications Technology

Publisher

Wiley

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