Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range-Reference-Cited by-同舟云学术

Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

Published:2015-02-16 Issue:7 Volume:106 Page:072102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Aseev Pavel¹,Rodriguez Paul E. D. Soto¹,Gómez Víctor J.¹,Alvi Naveed ul Hassan¹,Mánuel José M.²,Morales Francisco M.²³,Jiménez Juan J.²,García Rafael²,Senichev Alexander⁴,Lienau Christoph⁵,Calleja Enrique¹,Nötzel Richard⁶

Affiliation:

1. Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain

2. Departamente Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica, Facultad de Ciencias, Universidad de Cádiz, Puerto Real, 11510 Cádiz, Spain

3. IMEYMAT: Institute of Research on Electron Microscopy and Materials of the University of Cádiz, 11510 Cádiz, Spain

4. Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany

5. Institute of Physics and Center of Interface Science, Carl von Ossietzky Universität Oldenburg, Ammerländer Heerstr. 114-118, 26129 Oldenburg, Germany

6. L-NESS and Dipartimento di Scienza dei Materiali, Universitá di Milano-Bicocca, Via Cozzi 53, 20125 Milano, Italy

Funder

European Union project CRONOS

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4909515

Reference26 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes