Uniform Low-to-High In Composition InGaN Layers Grown on Si-Reference-Cited by-同舟云学术

Uniform Low-to-High In Composition InGaN Layers Grown on Si

Published:2013-11-01 Issue:11 Volume:6 Page:115503
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Aseev Pavel,Rodriguez Paul E. D. Soto,Kumar Praveen,Gómez Víctor J.,Alvi Naveed ul Hassan,Mánuel José M.,Morales Francisco M.,Jiménez Juan J.,García Rafael,Calleja Enrique,Nötzel Richard

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=11/a=115503/pdf

Reference19 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Surface-plasmon-enhanced light emitters based on InGaN quantum wells

3. Nitride-based semiconductors for blue and green light-emitting devices

4. Growth of Vertically Aligned InGaN Nanorod Arrays on p-Type Si Substrates for Heterojunction Diodes

5. Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

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