Theoretical maximum photogeneration efficiency and performance characterization of InxGa1−xN/Si tandem water-splitting photoelectrodes-Reference-Cited by-同舟云学术

Theoretical maximum photogeneration efficiency and performance characterization of InxGa1−xN/Si tandem water-splitting photoelectrodes

Published:2020-07-01 Issue:7 Volume:8 Page:071111
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Gaudy Yannick K.¹,Gačević Žarko²^ORCID,Haussener Sophia¹^ORCID

Affiliation:

1. Institute of Mechanical Engineering, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

2. Instituto de Sistemas Optoelectrónicos y Microtecnología, Departamento de Ingeniería Electrónica, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain

Funder

Spain’s Ministry of Science and Innovation

Swiss National Foundation

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0007034

Reference45 articles.

1. Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

2. Uniform Low-to-High In Composition InGaN Layers Grown on Si

3. Simulations of the irradiation and temperature dependence of the efficiency of tandem photoelectrochemical water-splitting systems

4. Technical and economic feasibility of centralized facilities for solar hydrogen production via photocatalysis and photoelectrochemistry

5. Holistic design guidelines for solar hydrogen production by photo-electrochemical routes

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