Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography-Reference-Cited by-同舟云学术

Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

Published:2015-02-16 Issue:7 Volume:106 Page:072104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tang Fengzai¹,Zhu Tongtong¹^ORCID,Oehler Fabrice¹^ORCID,Fu Wai Yuen¹^ORCID,Griffiths James T.¹,Massabuau Fabien C.-P.¹,Kappers Menno J.¹,Martin Tomas L.²,Bagot Paul A. J.²,Moody Michael P.²,Oliver Rachel A.¹^ORCID

Affiliation:

1. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

2. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

European Research Council (ERC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4909514

Reference26 articles.

1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. Nonpolar and Semipolar Group III Nitride-Based Materials

4. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

5. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN;Journal of Applied Physics;2023-05-11

2. Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well;Journal of Applied Physics;2023-01-12

3. Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects;Journal of Applied Physics;2022-12-21

4. Micrometer-thick, atomically random Si_0.06Ge_0.90Sn_0.04 for silicon-integrated infrared optoelectronics;Journal of Applied Physics;2022-11-21

5. Detecting Cage Crossing and Filling Clusters of Magnesium and Carbon Atoms in Zeolite SSZ-13 with Atom Probe Tomography;JACS Au;2022-10-14