Surface pattern evolution during thermal Cl2 etching of GaAs(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1584091
Reference9 articles.
1. New frontiers of molecular beam epitaxy with in-situ processing
2. Monolayer chemical beam etching: Reverse molecular beam epitaxy
3. Molecular beam epitaxial regrowth oninsituplasma‐etched AlAs/AlGaAs heterostructures
4. Low regrowth–interface recombination rates in InGaAs–GaAs buried ridge lasers fabricated by in situ processing
5. Chemical dry etching of GaAs and InP by Cl2using a new ultrahigh‐vacuum dry‐etching molecular‐beam‐epitaxy system
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Coupling versus Surface-Etching Reactions of Alkyl Halides on GaAs(100): I. CF3CH2I Reactions;Langmuir;2006-10-07
2. Surface pattern transfer inGaAswith molecular beams ofCl2;Physical Review B;2004-07-23
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