Low regrowth–interface recombination rates in InGaAs–GaAs buried ridge lasers fabricated by in situ processing-Reference-Cited by-同舟云学术

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Low regrowth–interface recombination rates in InGaAs–GaAs buried ridge lasers fabricated by in situ processing

Published:1995-04-10 Issue:15 Volume:66 Page:1966-1968
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Strand T. A.,Thibeault B. J.,Mui D. S. L.,Coldren L. A.,Petroff P. M.,Hu E. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113292

Reference13 articles.

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Root cause investigation of catastrophic degradation in high power multi-mode InGaAs-AlGaAs strained quantum well lasers;SPIE Proceedings;2010-02-11

2. Surface pattern transfer inGaAswith molecular beams ofCl2;Physical Review B;2004-07-23

3. Surface pattern evolution during thermal Cl2 etching of GaAs(001);Applied Physics Letters;2003-06-23

4. Strained-layer heteroepitaxy to fabricate self-assembled semiconductor islands;Nanostructured Materials and Nanotechnology;2002

5. Study of AlGaAs/GaAs quantum wells overgrown on in situ Cl[sub 2]-etched GaAs substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

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