Root cause investigation of catastrophic degradation in high power multi-mode InGaAs-AlGaAs strained quantum well lasers-Reference-Cited by-同舟云学术

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Root cause investigation of catastrophic degradation in high power multi-mode InGaAs-AlGaAs strained quantum well lasers

Published:2010-02-11 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Sin Yongkun,Ives Neil,Presser Nathan,Moss Steven C.

Publisher

SPIE

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Degradation processes in high-power broad-area lasers with strained InGaAs-AlGaAs QW and InAs-GaAs QD active regions;High-Power Diode Laser Technology XX;2022-03-04

2. Reliability and degradation mechanisms in high-power broad-area lasers with strained InGaAs-AlGaAs QW and InAs-GaAs QD active regions;High-Power Diode Laser Technology XIX;2021-03-05

3. Thermomechanical issues of high power laser diode catastrophic optical damage;Journal of Physics D: Applied Physics;2019-06-24

4. Catastrophic Optical Bulk Damage – A New Failure Mode in High-Power InGaAs-AlGaAs Strained Quantum Well Lasers;MRS Advances;2018-06-01

5. Root causes investigation of catastrophic optical bulk damage in high-power InGaAs-AlGaAs strained QW lasers;Novel In-Plane Semiconductor Lasers XVII;2018-03-14

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