Degradation processes in high-power broad-area lasers with strained InGaAs-AlGaAs QW and InAs-GaAs QD active regions

Author:

Sin Yongkun,Brodie Miles,Lingley Zachary,Ives Neil

Publisher

SPIE

Reference18 articles.

1. 29.5W continuous wave output from 100μm wide laser diode;Demir,2015

2. Improved brightness on broad-area single emitter (BASE) modules;Pawlik,2009

3. High-volume manufacturing of 8xx nm-10xx nm single emitter pumps by MBE growth technique;Gapontsev,2014

4. High reliability demonstrated on high power and high brightness diode lasers;Bao,2015

5. 25-W 915-nm Lasers With Window Structure Fabricated by Impurity-Free Vacancy Disordering (IFVD)

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