A study of interface states in metal‐GaAs 〈110〉 structures by Schottky capacitance spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331875
Reference22 articles.
1. Electronic properties of Ga/GaAs(110) upon interface formation
2. New phenomena in Schottky barrier formation on III–V compounds
3. The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers)
4. Fermi level pinning on (110) GaAs surfaces studied by CPD and SPV topographies
5. Observation of extrinsic surface states on (112̄0) CdS
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