Electronic properties of Ga/GaAs(110) upon interface formation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference19 articles.
1. High-resolution photoemission yield and surface states in semiconductors
2. Structural and electronic properties of cleaved Si(111) upon room-temperature formation of an interface with Ag
3. Interface states at the Ga–GaAs interface
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chapter 10 Defects in Metal/III/V Heterostructures;Imperfections in III/V Materials;1993
2. Dissociation effects of H and H+2 on clean III–V compounds;Physica B: Condensed Matter;1991-04
3. Dissociation effects of H and H+2 on clean III-V compounds;Hydrogen in Semiconductors;1991
4. From synchrotron radiation to I-V measurements of GaAs schottky barrier formation;Applied Surface Science;1990-01
5. Metal cluster formation on GaAs(110): A temperature dependence study;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-05
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