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From synchrotron radiation to I-V measurements of GaAs schottky barrier formation

  • Published:1990-01 Issue: Volume:41-42 Page:1-16
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Spicer W.E.,Cao R.,Miyano K.,Kendelewicz T.,Lindau I.,Weber E.,Liliental-Weber Z.,Newman N.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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1. Metal–Semiconductor Junctions and Semiconductor Heterostructures;Graduate Texts in Physics;2015

2. Band offsets, Schottky barrier heights, and their effects on electronic devices;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-09

3. Unexpected current lowering by a low work-function metal contact: Mg/SI–GaAs;Solid-State Electronics;2013-04

4. Atomic Structures and Electronic Properties of Semiconductor Interfaces;Comprehensive Semiconductor Science and Technology;2011

5. Schottky metal-GaN interface KOH pretreatment for improved device performance;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-07
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