Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1480108
Reference20 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
3. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
4. Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
5. III–V Nitrides—thermodynamics and crystal growth at high N2 pressure
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1. Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells;Nanoscale Research Letters;2015-12
2. Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes;Applied Physics Letters;2013-06-24
3. Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates;Journal of Electronic Materials;2012-06-06
4. The influence of growth temperatures on the characteristics of GaN nanowires;Applied Surface Science;2011-10
5. Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2010-09-21
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