High temperature phase transitions in NaNbO3 epitaxial films grown under tensile lattice strain

Author:

Bin Anooz S.1ORCID,Wang Y.12ORCID,Petrik P.34ORCID,de Oliveira Guimaraes M.1ORCID,Schmidbauer M.1ORCID,Schwarzkopf J.1ORCID

Affiliation:

1. Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, Germany

2. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, 710049 Xi'an, China

3. Institute for Technical Physics and Materials Science, Centre for Energy Research, Konkoly Thege Miklós Str. 29-33, 1121 Budapest, Hungary

4. Faculty of Science and Technology, University of Debrecen, P.O. Box 400, Debrecen 4002, Hungary

Abstract

We have investigated high temperature phase transitions in NaNbO3 thin films epitaxially grown under tensile lattice strain on (110) DyScO3 substrates using metal-organic vapor phase epitaxy. At room temperature, a very regular stripe domain pattern consisting of the monoclinic a1a2 ferroelectric phase was observed. Temperature-dependent studies of the refractive index and the optical bandgap as well as in situ high-resolution x-ray diffraction measurements prove a ferroelectric–ferroelectric phase transition in the range between 250 and 300 °C. The experimental results strongly suggest that the high-temperature phase exhibits a distorted orthorhombic a1/a2 crystal symmetry, with the electric polarization vector lying exclusively in the plane. A second phase transition was observed at about 500 °C, which presumably signifies the transition to the paraelectric phase. Both phase transitions show a pronounced temperature-dependent hysteresis, indicating first-order phase transitions.

Funder

European Regional Development Fund

Hungarian Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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