Analysis of increase in forward transconductance to determine the critical point of polarization at ferroelectric 1T1C memory-Reference-Cited by-同舟云学术

Analysis of increase in forward transconductance to determine the critical point of polarization at ferroelectric 1T1C memory

Published:2021-05-17 Issue:20 Volume:118 Page:202902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chang Kai-Chun¹,Chen Po-Hsun²,Chang Ting-Chang³^ORCID,Yeh Chien-Hung⁴,Lin Yun-Hsuan¹,Chang Yen-Cheng¹,Chen Wen-Chung⁵,Tan Yung‐Fang⁵,Wu Chung-Wei¹,Sze Simon⁶

Affiliation:

1. Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

2. Department of Applied Science, R. O. C. Naval Academy, Kaohsiung 813, Taiwan and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

3. Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan and the Center of Crystal Research, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

4. Department of Photonics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

5. Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan

6. Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Taiwan Semiconductor Research Institute (TSRI), Grant No.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0049755