BaTiO3/SrTiO3 heterostructures for ferroelectric field effect transistors
Author:
Affiliation:
1. Materials Department, University of California Santa Barbara, Santa Barbara, California 93016-5050, USA
Funder
Microelectronics Advanced Research Corporation (MARCO)
Office of Naval Research (ONR)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4985014
Reference32 articles.
1. In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor
2. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
3. Effect of ferroelectric polarization on insulated-gate thin-film transistor parameters
4. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
5. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
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