Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2188051
Reference22 articles.
1. MBE growth and properties of epitaxial metal oxides for high- dielectrics
2. Thermodynamic stability of binary oxides in contact with silicon
3. Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide
4. Growth of crystalline praseodymium oxide on silicon
5. Photoemission andab initiotheoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)
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