MBE growth and properties of epitaxial metal oxides for high- dielectrics
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides
4. Thermodynamic stability of binary oxides in contact with silicon
5. Band offsets of wide-band-gap oxides and implications for future electronic devices
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