Etch pits and dislocations of Ga1−xAlxAs liquid phase epitaxial layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323096
Reference14 articles.
1. Defect structure introduced during operation of heterojunction GaAs lasers
2. Optical observation of mismatch dislocations in GaAs luminescent diodes
3. Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation
4. Degradation of (Ga·Al)As double heterostructure diode lasers
5. Growth of Dark Lines from Crystal Defects in GaAs-GaAlAs Double Heterostructure Crystals
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A refined scheme for the reduction of threading dislocation densities in InxGa1−xAs/GaAs epitaxial layers;Journal of Applied Physics;1996-12-15
2. Insight into the genesis of irregularity during crystal growth achieved monochromatic high sensitivity monochromatic synchrotron x-radiation diffraction imaging (topography);Progress in Crystal Growth and Characterization of Materials;1990-01
3. Photochemical etching of laser‐induced defects in (Al,Ga)As heterostructures;Applied Physics Letters;1984-08-15
4. Reduction of threading dislocations in iso‐epitaxial layers grown on (001) InP substrates by misfit stresses;Applied Physics Letters;1981-05-15
5. Perfection of homoepitaxial layers grown on (001) InP substrates;Applied Physics Letters;1981-02-15
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