Threshold voltage control of Pt-Ti-O gate Si-metal-insulator semiconductor field-effect transistors hydrogen gas sensors by using oxygen invasion into Ti layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3645028
Reference9 articles.
1. Air-Annealing Effects for Pt/Ti Gate Si-Metal–Oxide–Semiconductor Field-Effect Transistors Hydrogen Gas Sensor
2. A Pt–Ti–O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor
3. A novel Pt-Ti-O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor
4. Oxygen interference mechanism of platinum–FET hydrogen gas sensor
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1. The hydrothermal synthesis of 3D hierarchical porous MoS2 microspheres assembled by nanosheets with excellent gas sensing properties;Journal of Alloys and Compounds;2018-06
2. Pt–Ti–O gate silicon–metal–insulator–semiconductor field-effect transistor hydrogen gas sensors in harsh environments;Japanese Journal of Applied Physics;2016-05-26
3. Suspended core-shell Pt-PtOx nanostructure for ultrasensitive hydrogen gas sensor;Journal of Applied Physics;2015-06-14
4. Hydrogen adsorption on and diffusion through MoS2 monolayer: First-principles study;International Journal of Hydrogen Energy;2012-10
5. Pt–Ti–O Gate Si-MISFET Hydrogen Gas Sensors-Devices and Packagings;IEEE Sensors Journal;2012-06
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