Experimental evidence of transition between dynamical and kinematical diffraction regimes in ion-implanted Si observed through X-ray multiple-beam diffraction mappings-Reference-Cited by-同舟云学术

Experimental evidence of transition between dynamical and kinematical diffraction regimes in ion-implanted Si observed through X-ray multiple-beam diffraction mappings

Published:2016-10-03 Issue:14 Volume:109 Page:141901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Calligaris Guilherme A.,Lang Rossano,Bettini Jefferson^ORCID,dos Santos Adenilson O.,Cardoso Lisandro P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4963791

Reference23 articles.

1. X-Ray Multiple-Wave Diffraction

2. Realizing in-plane surface diffraction by x-ray multiple-beam diffraction with large incidence angle

3. Hybrid multiple diffraction in Renninger scan for heteroepitaxial layers

4. Analysis of interfacial misfit dislocation by X-ray multiple diffraction

5. Sensitivity of Bragg surface diffraction to analyze ion-implanted semiconductors

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