Comparison of stability of WSiX/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation-Reference-Cited by-同舟云学术

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Comparison of stability of WSiX/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

Published:2004-01-19 Issue:3 Volume:84 Page:371-373
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Jihyun,Ren F.,Chung G. Y.,MacMillan M. F.,Baca A. G.,Briggs R. D.,Schoenfeld D.,Pearton S. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1642271

Reference22 articles.

1. 4H-SiC power devices for use in power electronic motor control

2. SiC power Schottky and PiN diodes

3. Performance evaluation of high-power wide band-gap semiconductor rectifiers

4. Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance

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