Changes in structure and nature of defects by annealing of fluorinated amorphous carbon thin films with low dielectric constant
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121105
Reference10 articles.
1. A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnections
2. Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide
3. Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics
4. Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics
5. Controlling Fluorine Concentration of Fluorinated Amorphous Carbon Thin Films for Low Dielectric Constant Interlayer Dielectrics
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