Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including self-heating effect-Reference-Cited by-同舟云学术

Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including self-heating effect

Published:2006-12-11 Issue:24 Volume:89 Page:243501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hu W. D.,Chen X. S.,Quan Z. J.,Xia C. S.,Lu W.,Yuan H. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2405416

Reference20 articles.

1. Simulation of gate lag and current collapse in gallium nitride field-effect transistors

2. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

3. Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

4. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

5. Dynamic current-voltage characteristics of III-N HFETs

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