Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

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Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

Published:2001 Issue:10 Volume:37 Page:661
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Klein P.B.,Binari S.C.,Ikossi-Anastasiou K.,Wickenden A.E.,Koleske D.D.,Henry R.L.,Katzer D.S.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20010434?crawler=true&mimetype=application/pdf

Reference5 articles.

1. Fabrication and characterization of GaN FETs

2. Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias

3. Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors

4. Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors

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4. A Comparative Study of GaN and Si-Based SOI FinFET;Topical Drifts in Intelligent Computing;2022

5. An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs;IEEE Access;2021

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