AlGaN ‐based p‐i‐p‐i‐n solar‐blind ultraviolet avalanche photodetectors with modulated polarization electric field
Author:
Affiliation:
1. School of Automobile and Transportation Wuxi Institute of Technology Wuxi China
2. Department of Public Course Teaching Shandong Polytechnic College Jining China
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2763
Reference26 articles.
1. Solid-State Light Sources Getting Smart
2. A model for the critical voltage for electrical degradation of GaN high electron mobility transistors
3. Photoresponse study of visible blind GaN/AlGaN p-i-n ultraviolet photodetector
4. Chemical Vapor Deposition Growth of Vertical MoS2 Nanosheets on p-GaN Nanorods for Photodetector Application
5. All AlGaN epitaxial structure solar-blind avalanche photodiodes with high efficiency and high gain
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1. Self-powered Schottky barrier photodiodes based on homoepitaxial Ga2O3 film;Materials Letters;2023-10
2. Observation of photoelectric-induced microplasma avalanche breakdown in AlGaN ultraviolet photodiode with separate absorption and multiplication structure;Applied Physics Letters;2023-09-18
3. Lead-Free Copper-Based Perovskite Nanonets for Deep Ultraviolet Photodetectors with High Stability and Better Performance;Nanomaterials;2022-09-20
4. AlGaN ‐based solar‐blind avalanche photodetectors with gradually doped charge layer;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-05-22
5. Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga2O3-Based Heterojunction;ACS Nano;2021-10-04
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