Author:
Joh Jungwoo,Gao Feng,Palacios Tomás,del Alamo Jesús A.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference28 articles.
1. Jimenez JL, Chowdhury U. X-band GaN FET reliability. In: IEEE Int Rel Phys Symp Proceedings; 2008.
2. Mechanisms for electrical degradation of GaN high-electron mobility transistors;Joh;IEEE IEDM Technol Digest,2006
3. Gate current degradation mechanisms of GaN high electron mobility transistors;Joh;IEEE IEDM Technol, Digest,2007
4. Reliability evaluation of high power AlGaN/GaN HEMTs on SiC substrate;Kim;Phys Status Solidi (a),2001
5. Reliability of GaN high-electron-mobility transistors: state of the art and perspectives;Meneghesso;IEEE Trans Dev Mater Reliab,2008
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