High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN-Reference-Cited by-同舟云学术

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

Published:2021-03-15 Issue:11 Volume:118 Page:112104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Breckenridge M. Hayden¹^ORCID,Bagheri Pegah¹^ORCID,Guo Qiang¹^ORCID,Sarkar Biplab¹^ORCID,Khachariya Dolar²^ORCID,Pavlidis Spyridon²^ORCID,Tweedie James³,Kirste Ronny³,Mita Seiji³,Reddy Pramod³^ORCID,Collazo Ramón¹,Sitar Zlatko¹³^ORCID

Affiliation:

1. Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27606, USA

2. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27606, USA

3. Adroit Materials, Cary, North Carolina 27518, USA

Funder

Air Force Office of Scientific Research

National Science Foundation

Army Research Office

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0042857

Reference49 articles.

1. AlN bandgap temperature dependence from its optical properties

2. Temperature Dependence of Band Gap Change in InN and AlN

3. Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

4. Schottky contact formation on polar and non-polar AlN

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