Terahertz emission from InAs/GaAs quantum dot based photoconductive devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3586774
Reference22 articles.
1. Cutting-edge terahertz technology
2. Time-resolved terahertz emission spectroscopy of wide miniband GaAs/AlGaAs superlattices
3. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures
4. Ultrafast release and capture of carriers in InGaAs/GaAs quantum dots observed by time-resolved terahertz spectroscopy
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1. Second order nonlinear optical properties of GaAs quantum dots in terahertz region;The European Physical Journal B;2023-10
2. Semiconductor Surface State Engineering for THz Nanodevices;Electromagnetic Materials and Devices;2020-01-22
3. Low-temperature carrier dynamics in MBE-grown InAs/GaAs single- and multi-layered quantum dots investigated via photoluminescence and terahertz time-domain spectroscopy;Optical Materials Express;2019-12-20
4. Effect of lattice-mismatch strain on electron dynamics in InAs/GaAs quantum dots as seen by time-domain terahertz spectroscopy;Journal of Physics D: Applied Physics;2018-07-04
5. Magnetic-field dependence of the impurity states in a dome-shaped quantum dot;Chemical Physics;2017-08
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